2*3mm Hole Titanium Expanded Mesh with Ir-Ta Coating for Semiconductor Plating is manufactured from ASTM B265 Grade 1 commercial pure titanium sheet. Unlike stamped mesh, expanded construction creates a continuous diamond-shaped opening-here specified as 2mm × 3mm-without material loss or welded intersections, preserving the titanium substrate's innate corrosion resistance and structural integrity. The expansion step orients strands at a controlled angle, increasing effective surface area while maintaining uniform current distribution across the anode face. For semiconductor plating applications, this geometry directly translates to stable electrolyte flow through the electrode, minimized bubble entrapment, and consistent electric field lines, all critical for achieving sub-micron plating uniformity on wafer-level substrates. Following expansion, the mesh undergoes rigorous alkaline degreasing and acid etching to remove native oxides, ensuring mechanical anchoring for the subsequent mixed-metal oxide coating.

2x3mm Hole Titanium Expanded Mesh with Ir-Ta Coating for Semiconductor Plating 6

The iridium-tantalum (Ir-Ta) oxide coating is applied via thermal decomposition of precursor salts, yielding a dimensionally stable anode (DSA) specifically engineered for oxygen evolution in sulfuric acid-based electrolytes containing trace chlorides-the exact chemistry encountered in advanced semiconductor copper plating baths. 2*3mm Hole Titanium Expanded Mesh with Ir-Ta Coating for Semiconductor Plating delivers oxygen evolution overpotential as low as 1.385V versus mercurous sulfate reference electrode, directly reducing cell voltage and energy consumption in pulse periodic reverse (PPR) plating operations. The Ir-Ta formulation exhibits superior resistance to anodic dissolution under high-current-density pulses common in copper damascene processes, where ruthenium-based coatings would suffer accelerated degradation.

Additionally, the tantalum oxide component stabilizes the coating structure, extending operational lifespan beyond 36 months under typical semiconductor foup-to-foup plating cycles. Each mesh lot is inspected with automated vision systems during flattening and finishing stages, certifying thickness tolerance within ±0.05mm and edge burr-free profiles compatible with automated plating tool handling. The result is a contamination-free anode that maintains dimensional stability, eliminates particulate shedding, and enables the repeatable, high-purity plating performance required for advanced interconnect metallization.

Products Specifications

Material	GR1 titanium
Pore size	2*3mm
Thickness	0.5mm
Coating	8-12um Ir-Ta coating
Size	55*55mm(Customized according to the drawing)

Products Features

2x3mm Hole Titanium Expanded Mesh with Ir-Ta Coating for Semiconductor Plating 5

Superior corrosion resistance in chloride-containing sulfuric acid

The tantalum oxide component stabilizes the coating matrix against anodic attack in electrolytes containing trace chlorides, a standard additive in advanced copper plating chemistries. Titanium substrate remains fully passivated, eliminating the risk of copper contamination from dissolved base metal.

Minimized bubble entrapment and improved mass transport

The open mesh structure allows evolved oxygen bubbles to detach rapidly from the electrode surface, reducing boundary layer resistance and maintaining consistent electrolyte flow. Stamped mesh or solid plate alternatives exhibit higher gas retention, leading to localized shielding and plating non-uniformity.

2x3mm Hole Titanium Expanded Mesh with Ir-Ta Coating for Semiconductor Plating 6

2x3mm Hole Titanium Expanded Mesh with Ir-Ta Coating for Semiconductor Plating 7

Contamination-free operation

Both titanium substrate and Ir-Ta coating are inert under plating conditions. No lead, antimony, or other soluble species are released into the electrolyte, eliminating the need for periodic anode bag replacement and reducing particle defects in sub-10μm features.

Thickness tolerance and burr-free edges

Post-expansion flattening and finishing are controlled with automated vision systems, holding thickness to ±0.05mm of nominal and ensuring all strand edges are deburred. This eliminates mechanical damage to membrane separators or wafer handling tooling.

Extended service life

Accelerated lifetime testing (ALT) under 2 A/cm² in 1.5 M H₂SO₄ consistently exceeds 36 months of continuous operation, with coating degradation indicated by voltage rise rather than catastrophic failure, enabling predictable maintenance scheduling.

Customizable geometric parameters

While specified as a 2mm × 3mm opening, the expanded mesh process allows independent control over strand width, opening angle, and open area percentage, enabling optimization for specific plating tool designs and fluid flow requirements without retooling costs.

2x3mm Hole Titanium Expanded Mesh with Ir-Ta Coating for Semiconductor Plating 3

Applications in Semiconductor Plating

Copper damascene for logic nodes – Anode assembly in 300mm plating tools for void-free bottom-up fill of sub-10nm trenches; expanded mesh ensures uniform current distribution under PPR waveforms.

Through-silicon via (TSV) filling – Full-cross-section anode in vertical chambers for 10:1–20:1 aspect ratio vias; maintains stable oxygen evolution during extended high-current-density cycles.

Redistribution layer (RDL) on panel-level packaging – Horizontal paddle plating systems; 2×3mm openings enable continuous electrolyte recirculation for <3% thickness variation across 600mm substrates.

Under-bump metallization (UBM) for flip-chip – Segmented current control in selective plating tools; coating withstands periodic reverse cleaning cycles without performance drift.

Embedded trace substrate (ETS) high-density interconnects – Vertical continuous platers (VCP); anode panel spans full substrate width, minimizing drag-out and eliminating solid plate maintenance constraints.

Gold/nickel bump for automotive and power devices – High-current-density operation (3–8 ASD); low overpotential reduces electrolyte heating, preserving bath stability for 20–100μm bumps.

Electrolytic copper foil post-treatment – Continuous lines for 6–18μm foil; expanded mesh enables uniform current across 1400mm web width in chromium-based passivation stages.

Plating tool retrofits – Direct replacement for Lam Research, Applied Materials, NEXX systems; Ir-Ta coating delivers extended service intervals over original ruthenium-based anodes.